The effect of defect disorder on the electronic structure of rutile TiO2-x
Single hydrogen atoms on the Si(001) surface
Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)
Bonding and electronics of the MoTe₂/Ge interface under strain
Electronic structure and high-temperature thermochemistry of BaZrO₃₋δ perovskite from first-principles calculations
- Ding, Xiang, Li, Menglu, Xiao, Haiyan, Zu, Xiaotao, Wang, Qingyuan, Vinu, Ajayan, Yi, Jiabao, Qiao, Liang, Chen, Pei, Zhao, Yan, Zhao, Mei, Leng, Huaqian, Wang, Yong, Ali, Sharafat, Raziq, Fazal, Wu, Xiaoqiang
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