Ba termination of Ge(001) studied with STM

- Koczorowski, W., Grzela, T., Radny, M. W., Schofield, S. R., Capellini, G., Czajka, R., Schroeder, T., Curson, N. J.

Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)

- Reusch, T. C. G, Warschkow, O., Radny, M. W., Smith, P. V., Marks, N. A., Curson, N. J., McKenzie, D. R., Simmons, M. Y.

Electronic effects induced by single hydrogen atoms on the Ge(001) surface

- Radny, M. W., Shah, G. A., Smith, P. V., Schofield, S. R., Curson, N. J.

Electronic effects of single H atoms on Ge(001) revisited

- Shah, G. A., Radny, M. W., Smith, P. V., Schofield, S. R., Curson, N. J.

Higher order reconstructions of the Ge(001) surface induced by a Ba layer

- Koczorowski, W., Grzela, T., Puchalska, A., Radny, M. W., Jurczyszyn, L., Schofield, S. R., Czajka, R., Curson, N. J.

Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C .G., Warschkow, O., Marks, N. A., Wilson, H. F., Curson, N. J., Schofield, S. R., McKenzie, D. R., Simmons, M. Y.

Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G., Warschkow, O., Marks, N. A., Wilson, H. F., Curson, N. J., Schofield, S. R., McKenzie, D. R., Simmons, M. Y.

Initial growth of Ba on Ge(001): an STM and DFT study

- Koczorowski, W., Puchalska, A., Grzela, T., Radny, M. W., Jurczyszyn, L., Schofield, S. R., Czajka, R., Curson, N. J.

Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures

- Warschkow, O., Wilson, H. F., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y.

Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures

- Warschkow, O., Wilson, H. F., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y.

Phosphine dissociation on the Si(001) surface

- Wilson, H. F., Warschkow, O., Marks, N. A., Schofield, S. R., Curson, N. J., Smith, P. V., Radny, M. W., McKenzie, D. R., Simmons, M. Y.

Reaction paths of phosphine dissociation on silicon (001)

- Warschkow, O., Curson, N. J., Schofield, S. R., Marks, N. A., Wilson, H. F., Radny, M. W., Smith, P. V., Reusch, T. C. G., McKenzie, D. R., Simmons, M. Y.

Reply to: Comment on 'Valence surface electronic states on Ge(001)' (commentary)

- Radny, M. W., Shah, G. A., Schofield, S. R., Smith, P. V., Curson, N. J.

Scanning probe microscopy for silicon device fabrication

- Simmons, M. Y., Ruess, F. J., Reusch, T. C. G., Goh, K. E. J., Hallam, T., Schofield, S. R., Oberbeck, L., Curson, N. J., Hamilton, A. R., Butcher, M. J., Clark, R. G.

Single hydrogen atoms on the Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G, Warschkow, O., Marks, N. A., Wilson, H. F., Schofield, S. R., Curson, N. J., McKenzie, D. R., Simmons, M. Y.

Single P and As dopants in the Si(001) surface

- Radny, M. W., Smith, P. V., Reusch, T. C. G., Warschkow, O., Marks, N. A., Shi, H. Q., McKenzie, D. R., Schofield, S. R., Curson, N. J., Simmons, M. Y.

Valence surface electronic states on Ge(001)

- Radny, M. W., Shah, G. A., Schofield, S. R., Smith, P. V., Curson, N. J.