- Title
- Adsorption of O and Cl on Tl/Si(111) - suppressed spin polarization via bilayer formation
- Creator
- Pieczyrak, B.; Jurczyszyn, L.; Radny, M. W.
- Relation
- Surface Science Vol. 696, Issue June 2020, no. 121598
- Publisher Link
- http://dx.doi.org/10.1016/j.susc.2020.121598
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2020
- Description
- Adsorption of O and Cl on Tl/Si(111) is studied using density functional theory. The surface of the Cl-Tl/Si(111) system was found to be metallic while that for O-Tl/Si(111), semiconducting. It is found, however, that the O/Tl and Cl/Tl interactions in Tl/Si(111) are very similar in nature and lead to the formation of the Tl-O and Tl-Cl bilayers weakly bonded to the Si(111)-1 x 1 substrate. The spin polarization of the Tl-induced gap states, originally present in Tl/Si(111), is also suppressed in both systems.
- Subject
- DFT; semiconductor; spin orbit; Rashba effect; Si(111); Tl
- Identifier
- http://hdl.handle.net/1959.13/1426526
- Identifier
- uon:38432
- Identifier
- ISSN:0039-6028
- Rights
- © 2020 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/BY-NC-ND/4.0/).
- Language
- eng
- Full Text
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