- Title
- Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1)
- Creator
- Reusch, T. C. G; Warschkow, O.; Radny, M. W.; Smith, P. V.; Marks, N. A.; Curson, N. J.; McKenzie, D. R.; Simmons, M. Y.
- Relation
- Surface Science Vol. 601, Issue 18, p. 4036-4040
- Publisher Link
- http://dx.doi.org/10.1016/j.susc.2007.04.072
- Publisher
- Elsevier
- Resource Type
- journal article
- Date
- 2007
- Description
- We have studied single Si dangling bonds on the Si(0 0 1) surface using scanning tunnelling microscopy (STM) and density functional theory (DFT) calculations. The Si dangling bonds are created by the chemisorption of single hydrogen atoms forming a Si–Si–H hemihydride. At room temperature, the hemihydride induces static buckling on adjacent Si–Si dimers. In the STM measurements, we observe that the orientation of the static buckling pattern can be reversed with tip-sample bias and influenced by the substrate doping. Our DFT calculations yield a correlation between the electron occupancy of the hemihydride Si dangling bond and the buckling orientation around it.
- Subject
- scanning tunnelling microscopy; density functional theory; chemisorption; surface relaxation and reconstruction
- Identifier
- http://hdl.handle.net/1959.13/33930
- Identifier
- uon:3388
- Identifier
- ISSN:0039-6028
- Language
- eng
- Full Text
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