Water-induced, spin-dependent defects on the silicon (001) surface

Title: Water-induced, spin-dependent defects on the silicon (001) surface
Creator: Smith, Phillip V.; Belcher, Daniel R.; Radny, Marian W.; Jurczyszyn, Leszek; Schofield, Steven R.; Warschkow, Oliver
Relation: Journal of Physical Chemistry: Part C Vol. 119, Issue 21, p. 11612-11618
Publisher Link: http://dx.doi.org/10.1021/acs.jpcc.5b01493
Publisher: American Chemical Society
Resource Type: journal article
Date: 2015
Description: It is now well established that an isolated C-defect on the Si(001) surface corresponds to a dissociated water molecule with the H and OH species bonded to silicon atoms on the same side of two adjacent surface dimers. In this paper we show that there are two distinct types of such C-defects at both low temperature (∼100 K) and room temperature. These defects differ in the buckling orientation of the Si–Si dimers adjacent to the defect and/or the distribution of their localized electron spins. Changes in the buckling configuration of the bare Si–Si dimers neighboring the defect modifies the interaction between its dangling bonds and the surface and leads to significant variations in the defect charge density distributions.
Subject: silicon; silicon surface; C-defect
Identifier: http://hdl.handle.net/1959.13/1337199
Identifier: uon:27787
Identifier: ISSN:1932-7447
Language: eng
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