- Title
- Damage accumulation and recovery in C+ -irradiated Ti3SiC2
- Creator
- Qi, Q.; Cheng, G. J.; Shi, L. Q.; O'Connor, D. J.; King, B. V.; Kisi, E. H.
- Relation
- Acta Materialia Vol. 66, p. 317-325
- Publisher Link
- http://dx.doi.org/10.1016/j.actamat.2013.11.019
- Publisher
- Pergamon
- Resource Type
- journal article
- Date
- 2014
- Description
- The radiation damage response of Tii3SiC2 irradiated by 700 keV C ions has been investigated over a range of fluences and sample temperatures. The samples were analysed using a series of experimental techniques, including glancing-incidence X-ray diffraction, Rutherford backscattering spectrometry, Raman spectroscopy and scanning electron microscopy. This material exhibits a high level of tolerance to damage, especially at high temperature. Irradiation at temperatures from room temperature to 270 °C results in decomposition to TiC; however, this is not observed at temperatures above 270 °C. A minimum in the observed damage level is evident for irradiation at a sample temperature of 350 °C. At higher temperatures the damage level increases, and results in material which is made up of damaged Tii3SiC2.
- Subject
- radiation damage; MAX phase; XRD
- Identifier
- http://hdl.handle.net/1959.13/1295453
- Identifier
- uon:19030
- Identifier
- ISSN:1359-6454
- Language
- eng
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