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Water on silicon (001): C defects and initial steps of surface oxidation |
Warschkow, O.; Schofield, S. R.; Marks, N. A.; Radny, M. W.; Smith, P. V.... More
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2008 |
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Doping and STM tip-induced changes to single dangling bonds on Si(0 0 1) |
Reusch, T. C. G; Warschkow, O.; Radny, M. W.; Smith, P. V.; Marks, N. A.... More
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2007 |
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Single hydrogen atoms on the Si(001) surface |
Radny, M. W.; Smith, P. V.; Reusch, T. C. G; Warschkow, O.; Marks, N. A.... More
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2007 |
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Single P and As dopants in the Si(001) surface |
Radny, M. W.; Smith, P. V.; Reusch, T. C. G.; Warschkow, O.; Marks, N. A.... More
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2007 |
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Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface |
Radny, M. W.; Smith, P. V.; Reusch, T. C. G.; Warschkow, O.; Marks, N. A.... More
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2006 |
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Importance of charging in atomic resolution scanning tunneling microscopy: study of a single phosphorus atom in a Si(001) surface |
Radny, M. W.; Smith, P. V.; Reusch, T. C .G.; Warschkow, O.; Marks, N. A.... More
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2006 |
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Molecular dissociation of group-V hydrides on Si(001) |
McDonell, T. L.; Marks, N. A.; Warschkow, O.; Wilson, H. F.; Smith, P. V.... More
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2005 |
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Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures |
Warschkow, O.; Wilson, H. F.; Marks, N. A.; Schofield, S. R.; Curson, N. J.... More
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2005 |
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Phosphine adsorption and dissociation on the Si(001) surface: an ab initio survey of structures |
Warschkow, O.; Wilson, H. F.; Marks, N. A.; Schofield, S. R.; Curson, N. J.... More
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2005 |
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|
 |
Phosphine dissociation on the Si(001) surface |
Wilson, H. F.; Warschkow, O.; Marks, N. A.; Schofield, S. R.; Curson, N. J.... More
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2004 |
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