Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope | NOVA. The University of Newcastle's Digital Repository

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Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.13/916411

Title: Nanoscale band gap spectroscopy on ZnO and GaN-based compounds with a monochromated electron microscope
Author/Creator: Bosman, M.; Tang, L. J.; Ye, J. D.; Tan, S. T.; Zhang, Y.; Keast, V. J.
Institution: The University of Newcastle. Faculty of Science & Information Technology, School of Mathematical and Physical Sciences
Description: Monochromated low-loss EELS (electron energy-loss spectroscopy) is explored as an analytical technique for nanoscale mapping of the electronic band gap energy on arsenic-implanted ZnO, CdZnO, and InGaN compounds. Its accuracy is confirmed independently with Raman spectroscopy. From a ternary compound, the relationship between the band gap energy and the chemical composition is determined, a powerful application of low-loss EELS. The effects of electron beam delocalization are discussed using examples from In₀․₂₅Ga₀․₇₅N quantum wells.
Relation: Applied Physics Letters Vol. 95, Issue 10
Publisher Link: http://dx.doi.org/10.1063/1.3222974
Date: 2009
Publisher: American Institute of Physics
Keyword(s): arsenic; cadmium compounds; doping profiles; electron energy loss spectra
Resource Type: journal article
Rights: © American Institute of Physics
Identifier: http://hdl.handle.net/1959.13/916411
Identifier: ISSN:0003-6951

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