Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.13/43138

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Title
Highly resilient field emission from aligned single-walled carbon nanotube arrays chemically attached to n-type silicon
Author/Creator
Shearer, Cameron James;  Yu, Jingxian;  O'Donnell, Kane Micheal;  Thomsen, Lars;  Dastoor, Paul Christopher;  Quinton, Jamie Scott;  Shapter, Joseph George
Institution
The University of Newcastle. Faculty of Science & Information Technology, School of Mathematical and Physical Sciences
Description
Single-walled carbon nanotubes (SWNTs) were chemically attached to an n-type silicon (100) substrate (n-Si) by exposing the surface to a nanotube-containing suspension for attachment times varying from 2 to 72 h. The SWNTs were imaged by atomic force microscopy (AFM) revealing a high density of vertically aligned SWNT bundles. Cyclic voltammetry experiments demonstrated that the n-type character of the substrate was maintained after the chemical attachment process. The SWNT/n-Si surfaces were found to field emit with a turn-on field ranging from 1.37–1.64 V μm⁻¹. From the Fowler–Nordheim (F–N) plots the field enhancement factor, β, was found to vary between ~5000–7000 depending upon attachment time, which is consistent with changes in the sharpness of the SWNT tips as shown by AFM. The robustness of the field emitters was tested by maintaining a constant current and measuring the change in voltage required. The structures were found to have excellent stability over several days. The prospect for chemically attached SWNT arrays in field emission displays is discussed.
Relation
Journal of Materials Chemistry Vol. 18, Issue 47, p. 5753-5760
Publisher Link
http://dx.doi.org/10.1039/b811546j
Date
2008
Publisher
Royal Society of Chemistry
Keyword(s)
nanotube;  silicon;  chemical attachment process;  stability
Resource Type
journal article
Identifier
http://hdl.handle.net/1959.13/43138
Identifier
ISSN:0959-9428
Reviewed
Reviewed
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Subject
"Journal of Materials Chemistry"
 
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