Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.13/39085
- Title
- Valence surface electronic states on Ge(001)
- Author/Creator
-
Radny, M. W.;
Shah, G. A.;
Schofield, S. R.;
Smith, P. V.;
Curson, N. J.
- Institution
- The University of Newcastle. Faculty of Science & Information Technology, School of Mathematical and Physical Sciences
- Description
- The optical, electrical, and chemical properties of semiconductor surfaces are largely determined by their electronic states close to the Fermi level (EF). We use scanning tunneling microscopy and density functional theory to clarify the fundamental nature of the ground state Ge(001) electronic structure near EF, and resolve previously contradictory photoemission and tunneling spectroscopy data. The highest energy occupied surface states were found to be exclusively back bond states, in contrast to the Si(001) surface, where dangling bond states also lie at the top of the valence band.
- Relation
- Physical Review Letters Vol. 100, Issue 24
- Publisher Link
- http://dx.doi.org/10.1103/PhysRevLett.100.246807
- Date
- 2008
- Publisher
- American Physical Society
- Keyword(s)
-
semiconductor surfaces;
scanning tunneling microscopy;
electronic states;
Fermi level;
density functional theory;
valence band;
Ge(001);
Si(001)
- Resource Type
- journal article
- Identifier
- http://hdl.handle.net/1959.13/39085
- Identifier
- ISSN:0031-9007
- Reviewed
- Full Text
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