Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.13/33976

OpenURL Link
Title
Scanning probe microscopy for silicon device fabrication
Author/Creator
Simmons, M. Y.;  Ruess, F. J.;  Reusch, T. C. G.;  Goh, K. E. J.;  Hallam, T.;  Schofield, S. R.;  Oberbeck, L.;  Curson, N. J.;  Hamilton, A. R.;  Butcher, M. J.;  Clark, R. G.
Institution
The University of Newcastle. Faculty of Science & Information Technology, School of Mathematical and Physical Sciences
Description
We present a review of a detailed fabrication strategy for the realisation of nano and atomic-scale devices in silicon using phosphorus as a dopant and a combination of ultra-high vacuum scanning probe microscopy and silicon molecular beam epitaxy (MBE). In this work we have been able to overcome some of the key fabrication challenges to the realisation of atomic-scale devices including the identification of single P dopants in silicon, the controlled incorporation of P atoms in silicon with atomic precision and the minimisation of P segregation and diffusion during Si encapsulation. Recently, we have combined these results with a novel registration technique to fabricate robust electrical devices in silicon that can be contacted and measured outside the ultra-high vacuum environment. We discuss the importance of our results for the future fabrication of atomic-scale devices in silicon.
Relation
Molecular Simulation Vol. 31, Issue 6-7, p. 505-514
Publisher Link
http://dx.doi.org/10.1080/08927020500035580
Date
2005
Publisher
Taylor & Francis
Keyword(s)
scanning tunneling microscopy;  nanoelectronics;  silicon;  lithography
Resource Type
journal article
Identifier
http://hdl.handle.net/1959.13/33976
Identifier
ISSN:0892-7022
Reviewed
Reviewed
18 Visitors 20 Hits 0 Downloads
Save/E-mail Citation
Citation Format
E-mail Address
Subject
"Molecular Simulation"
 
OR