Please use this identifier to cite or link to this item: http://hdl.handle.net/1959.13/33923

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Title
Measurements of Si ion stopping in amorphous silicon
Author/Creator
Whitlow, Harry J.;  Timmers, Heiko;  Elliman, Robert G.;  Weijers, Tessica D. M.;  Zhand, Yanwen;  Uribastera, Juan;  O'Connor, D. John
Institution
The University of Newcastle. Faculty of Science & Information Technology, School of Mathematical and Physical Sciences
Description
The stopping of ²⁸Si ions in polycrystalline Si foils has been measured over the energy range 0.1–3.3 MeV per nucleon. For the low energy interval (0.1–0.5 MeV per nucleon), time of flight-energy elastic recoil detection analysis method was used, whilst for the high energy region (1.2–3.3 MeV per nucleon) the energy loss in the same foil was measured using a Si p–i–n diode with the ²⁸Si ions directly incident on the foil following acceleration. Below the stopping maximum the results are in good agreement with literature data based on Doppler shift measurements of short nuclear lifetimes but are about 20% smaller than the SRIM prediction. Above the stopping maximum the data are in agreement with SRIM within the limits of statistical uncertainty.
Relation
Nuclear Instruments and Methods in Physics Research B Vol. 190, Issue 1-4, p. 84-88
Publisher Link
http://dx.doi.org/10.1016/S0168-583X(01)01301-5
Date
2002
Publisher
Elsevier Science BV
Keyword(s)
silicon;  stopping;  energy loss;  time of flight
Resource Type
journal article
Identifier
http://hdl.handle.net/1959.13/33923
Identifier
ISSN:0168-583X
Reviewed
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Subject
"Nuclear Instruments and Methods in Physics Research B"
 
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